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AS6C6264 Datasheet(PDF) 4 Page - Alliance Semiconductor Corporation |
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AS6C6264 Datasheet(HTML) 4 Page - Alliance Semiconductor Corporation |
4 / 12 page 8K X 8 BIT LOW POWER CMOS SRAM AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE AS6C6264-55 PARAMETER SYM. MIN. MAX. UNIT Read Cycle Time tRC 55 - ns Address Access Time tAA - 55 ns Chip Enable Access Time tACE - 55 ns Output Enable Access Time tOE 30 ns Chip Enable to Output in Low-Z tCLZ* 10 - ns Output Enable to Output in Low-Z tOLZ* 5 - ns Chip Disable to Output in High-Z tCHZ* - 20 ns Output Disable to Output in High-Z tOHZ* 20 ns Output Hold from Address Change tOH 10 - ns (2) WRITE CYCLE AS6C6264-55 PARAMETER SYM. MIN. MAX. UNIT Write Cycle Time tWC 55 - ns Address Valid to End of Write tAW 50 - ns Chip Enable to End of Write tCW 50 - ns Address Set-up Time tAS 0 - ns Write Pulse Width tWP 45 - ns Write Recovery Time tWR 0 - ns Data to Write Time Overlap tDW 25 - ns Data Hold from End of Write Time tDH 0 - ns Output Active from End of Write tOW* 5 - ns Write to Output in High-Z tWHZ* - 20 ns *These parameters are guaranteed by device characterization, but not production tested. ® Page 4 of 12 |
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