MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21962/-A/-C

TRANSFER-MOLD TYPE

INSULATED TYPE

Jun. 2005

2.20

2.30

2.20

1.60

—

0.50

2.00

0.80

1

10

4.7

5.4

mA

V

°C

°C

°C

°C

Condition

Symbol

Parameter

Limits

Inverter IGBT part (per 1/6 module)

Inverter FWD part (per 1/6 module)

Min.

THERMAL RESISTANCE

Typ.

Max.

—

—

—

—

Unit

Condition

Symbol

Parameter

Limits

Min.

Typ.

Max.

—

—

—

0.50

—

—

—

—

—

—

Unit

°C, unless otherwise noted)

INVERTER PART

Collector-emitter saturation

voltage

FWD forward voltage

Junction to case thermal

resistance

(Note 3)

Switching times

Inductive load (upper-lower arm)

Collector-emitter cut-off

current

1.70

1.80

1.70

1.00

0.30

0.30

1.40

0.50

—

—

V

µs

µs

µs

µs

µs

°C/W

°C/W

CONTROL (PROTECTION) PART

Note 4 : Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is

less than 1.7 times of the current rating.

5: Fault signal is asserted corresponding to a short circuit or lower side control supply under-voltage failure.

Symbol

Parameter

Condition

Limits

Unit

Circuit current

Short circuit trip level

Control supply under-voltage

protection

Fault output pulse width

ON threshold voltage

OFF threshold voltage

ON/OFF threshold hysteresis

voltage

Ω

(Note 4)

Trip level

Reset level

Trip level

Reset level

(Note 5)

—

—

—

—

4.9

—

0.43

0.70

10.0

10.5

10.3

10.8

20

—

0.8

0.35

—

—

—

—

—

—

0.48

1.00

—

—

—

—

—

2.1

1.3

0.65

2.80

0.55

2.80

0.55

—

0.95

0.53

1.50

12.0

12.5

12.5

13.0

—

2.6

—

—

Min.

Typ.

Max.

mA

mA

mA

mA

V

V

V

mA

V

V

V

V

µs

V

V

V

≤ 125°C

Note 3 : Grease with good thermal conductivity should be applied evenly with about +100

µm~+200µm on the contacting surface of DIP-IPM

and heat-sink.

°C/W when the grease thickness is 20µm and

the thermal conductivity is 1.0W/m·k.

Input current