TF252C

No. A0897-2/4

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gate-to-Drain Breakdown Voltage

V(BR)GDO

IG=--100µA--20

V

Cutoff Voltage

VGS(off)

VDS=2V, ID=1µA--0.1

--0.4

--1.0

V

Zero-Gate Voltage Drain Current

IDSS

VDS=2V, VGS=0V

140*

350*

µA

Forward Transfer Admittance

yfs

VDS=2V, VGS=0V, f=1kHz

0.8

1.4

mS

Input Capacitance

Ciss

VDS=2V, VGS=0V, f=1MHz

3.1

pF

Reverse Transfer Capacitance

Crss

VDS=2V, VGS=0V, f=1MHz

0.95

pF

[Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.]

Voltage Gain

GV

VIN=10mV, f=1kHz

1.0

dB

Reduced Voltage Characteristic

∆GVV

VIN=10mV, f=1kHz, VCC=2.0→1.5V

--0.6

--2.0

dB

Frequency Characteristic

∆Gvf

f=1kHz to 110Hz

--1.0

dB

Total Harmonic Distortion

THD

VIN=30mV, f=1kHz

0.65

%

Output Noise Voltage

VNO

VIN=0V, A curve

--106

--102

dB

*

Rank

45

IDSS

140 to 240

210 to 350

Package Dimensions

Test Circuit

unit : mm (typ)

7048-001

ID -- VDS

ID -- VDS

Drain-to-Source Voltage, VDS -- V

Drain-to-Source Voltage, VDS -- V

0

0.5

2.0

1.0

1.5

300

200

250

100

50

150

0

IT12440

VGS=0V

--0.10V

--0.15V

--0.05V

--0.20V

--0.30V

--0.25V

IT12441

01

5

234

350

300

200

250

100

50

150

0

VGS=0V

--0.1V

--0.2V

--0.4V

--0.3V

OSC

5pF

+

33µF

2.2kΩ

VCC=2.0V

VCC=1.5V

V

VTVM

THD

Voltage gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

1 : Drain

2 : Source

3 : Gate

SANYO : TSSFP

3

1

12

3

2

1.2

0.2

0.11

0 to 0.02

0.4

Top View

Bottom View