MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS12033

FLAT-BASE TYPE

INSULATED TYPE

Mar. 2002

TOTAL SYSTEM

(Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM

power chips (IGBT & FWDi) is Tj < 150.

THERMAL RESISTANCE

Condition

Symbol

Item

Ratings

Unit

(Note 2)

—

(Fig. 3)

60 Hz sinusoidal AC applied between all terminals and

the base plate for 1 minute.

Mounting screw: M3.5

—

Junction temperature

Storage temperature

Module case operating temperature

Isolation voltage

Mounting torque

–20 ~ +125

–40 ~ +125

–20 ~ +100

2500

0.78 ~ 1.27

°C

°C

°C

Vrms

N·m

Condition

Symbol

Item

Ratings

Inverter IGBT (1/6)

Inverter FWDi (1/6)

Converter Di (1/6)

Case to fin, thermal grease applied (1 Module)

Rth(cf)

Junction to case Thermal

Resistance

Contact Thermal Resistance

Min.

°C/W

°C/W

°C/W

°C/W

Typ.

Max.

—

—

—

—

—

—

—

—

2.5

4.5

2.5

0.05

Unit

Short circuit endurance

(Output, Arm, and Load, Short Circuit Modes)

Switching SOA

Tj = 25

(Shunt voltage drop not included)

Tj = 25

Tj = 25

°C

1/2 Bridge inductive, Input = 5V

↔ 0V

°C

Note: ton, toff include delay time of the internal control

circuit.

Condition

Symbol

Item

Ratings

Min.

V

V

V

mA

µs

µs

µs

µs

µs

Typ.

Max.

—

—

—

—

0.3

—

—

—

—

—

—

—

—

1.2

0.5

2.2

0.9

0.2

3.6

3.5

1.5

8

2.0

1.4

4.0

1.6

—

• No destruction

• No destruction

• No protecting operation

Collector-emitter saturation

voltage

FWDi forward voltage

Converter diode voltage

Converter diode reverse current

Switching times

FWDi reverse recovery time

ton

tc(on)

toff

tc(off)

trr

≤ 800V, Input = 5V → 0V (One-Shot)

–20˚C

≤ 800V, Input = 5V ↔ 0V, Tj ≤ 150°C

Unit

(Fig. 3)

CASE TEMPERATURE MEASUREMENT POINT

LABEL