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MCH6731 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. MCH6731
Description  PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode DC / DC Converter Applications
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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MCH6731
No.7708-2/5
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=--12V, IE=0
--0.1
µA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--0.1
µA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
300
700
Gain-Bandwidth Product
fT
VCE=--2V, IC=--50mA
450
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
6
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--400mA, IB=--20mA
--120
--180
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--400mA, IB=--20mA
--0.9
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10µA, IE=0
--15
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--12
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10µA, IC=0
--5
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
75
ns
Fall Time
tf
See specified Test Circuit.
15
ns
[Di]
Reverse Voltage
VR
IR=0.5mA
12
V
Forward Voltage
VF
IF=0.5A
0.40
0.45
V
Reverse Current
IR
VR=6V
90
µA
Interterminal Capacitance
C
VR=10V, f=1MHz
13
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Package Dimensions
unit : mm
2191A
Electrical Connection
5
6
1
4
23
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
Top view
2.0
0.65
0.3
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
1 : Base
2 : Emitter
3 : Anode
4 : Common(Collector/Cathode)
5 : Common(Collector/Cathode)
6 : Common(Collector/Cathode)
SANYO : MCPH6




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