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CY62128BN
MoBL®
Document #: 001-06498 Rev. *A
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Capacitance[5]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
9pF
COUT
Output Capacitance
9
pF
Thermal Resistance[5]
Parameter
Description
Test Conditions
32 SOIC
32 STSOP
32 TSOP
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
66.17
105.14
97.44
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
30.87
14.09
26.05
°C/W
AC Test Loads and Waveforms
90%
10%
VCC
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
R1 1800
Ω
R1 1800
Ω
R2
990
Ω
R2
990
Ω
639
Ω
Equivalent to:
THÉVENIN EQUIVALENT
1.77V
Rise TIme:
1 V/ns
Fall TIme:
1 V/ns
Data Retention Waveform
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions[6]
Min.
Typ.
Max.
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current
VCC = VDR = 2.0V,
CE1 ≥ VCC – 0.3V, or CE2 ≤ 0.3V,
VIN ≥ VCC – 0.3V or, VIN ≤ 0.3V
Commercial/
Industrial
Automotive-A
1.5
15
µA
Automotive-E
1.5
25
µA
tCDR
Chip Deselect to Data
Retention Time
0ns
tR
Operation Recovery Time
70
ns
Note:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed VCC + 0.5V.
VCC, min.
VCC, min.
tCDR
VDR > 2V
tR
CE1
VCC
CE2
or
DATA RETENTION MODE
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