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CY62126DV30 MoBL®
Document #: 38-05230 Rev. *H
Page 4 of 12
AC Test Loads and Waveforms
Data Retention Waveform
Notes:
8. Tested initially and after any design or proces changes that may affect these parameters.
9. Full device operation requires linear VCC ramp from VDR to VCC(min.) >100 µs.
Capacitance[8]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = VCC(typ)
8
pF
COUT
Output Capacitance
8
pF
Thermal Resistance[8]
Parameter
Description
Test Conditions
TSOP
VFBGA
Unit
Θ
JA
Thermal Resistance (Junction to Ambient) Still Air, soldered on a 3 x 4.5 inch,
2-layer printed circuit board
55
76
°C/W
Θ
JC
Thermal Resistance (Junction to Case)
12
11
°C/W
Data Retention Characteristics
Parameter
Description
Conditions
Min.
Typ[2]
Max.
Unit
VDR
VCC for Data Retention
1.5
V
ICCDR
Data Retention Current
VCC=1.5V, CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
L
Ind’l
4
µA
L
Auto
10
LL
Ind’l
3
tCDR
[8]
Chip Deselect to Data
Retention Time
0
ns
tR
[9]
Operation Recovery Time
100
µs
VCC Typ
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
VTH
Equivalent to:
THEVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Rise TIme: 1 V/ns
Fall Time: 1 V/ns
Parameters
2.5V
3.0V
Unit
R1
16600
1103
Ohms
R2
15400
1554
Ohms
RTH
8000
645
Ohms
VTH
1.2
1.75
Volts
VCC(min)
VCC(min)
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
CE
VCC
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