FW349 datasheet(5/6 Pages) SANYO

Part #	FW349

Description	N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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FW349

No.8750-5/6

Ciss, Coss, Crss -- VDS

SW Time -- ID

[Pch]

VGS -- Qg

A S O

[Pch]

PD -- Ta

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, VDS -- V

Ambient Temperature, Ta --

°C

yfs -- ID

IS -- VSD

[Pch]

Drain Current, ID -- A

Diode Forward Voltage, VSD -- V

PD(FET 1) -- PD(FET 2) [Nch, Pch]

[Nch, Pch]

Allowable Power Dissipation, PD (FET 2) -- W

05

10

15

20

25

30

0

--2

--4

--6

--8

--10

--1

--3

--5

--7

--9

3

100

5

3

2

5

3

2

7

5

1000

10

100

2

7

5

3

2

3

--0.1

23

5

7

--1.0

23

5

7

--10

0--5

--10

--15

--20

--25

--45

--30

--35

--40

IT12890

IT12891

Ciss

Coss

Crss

f=1MHz

td(on)

td(off)

tr

tf

VDS= --24V

ID= --4.5A

IT12892

020

406080

100

120

140

160

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

2.6

2.4

2.2

2.0

1.6

1.8

IT12894

1unit

VDD= --24V

VGS= --10V

Mounted on a ceramic board (1500mm2

✕0.8mm)

PW

≤10s

0

0.2

0.4

0.6

1.0

0.8

1.2

1.4

1.6

1.8

2.0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

2.0

1.6

1.8

IT12895

Mounted on a ceramic board (1500mm2

✕0.8mm)

PW

≤10s

--0.01

--0.1

--1.0

--10

23

5 7

23

5 7

23

5 7

--100

23

5 7

--0.01

--0.1

--1.0

--10

7

5

3

2

7

5

3

2

5

3

2

7

5

3

2

IT12893

100ms

DC

operation

100

µs

1ms

10ms

10s

IDP= --18A

≤10µs

ID= --4.5A

Operation in this

area is limited by RDS(on).

IT12889

2

--0.01

--0.1

7

5

3

2

7

5

3

2

7

5

3

--1.0

--10

0--0.2

--0.4

--0.6

--0.8

--1.0

--1.4

--1.2

0.1

2

7

5

3

2

7

5

3

1.0

10

IT12888

VGS=0V

VDS= --10V

75

°C

25°

C

Ta=

--25

°C

--0.01

--0.1

23

5

7

23

57

2

3

57

--1.0

--10

Ta=25

°C

Single pulse

Mounted on a ceramic board (1500mm2

✕0.8mm) 1unit

Total

dissipation

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