CY2037
Document #: 38-07354 Rev. *D
Page 6 of 10
Absolute Maximum Ratings[3]
Supply Voltage ..................................................–0.5 to +7.0V
Input Voltage .............................................. –0.5V to VDD+0.5
Storage Temperature (Non-Condensing).... 55°C to +150°C
Junction Temperature ................................. –40°C to +100°C
Static Discharge Voltage........................................... > 2000V
(per MIL-STD-883, Method 3015)
Operating Conditions
Parameter
Description
Min.
Max.
Unit
VDD
Supply Voltage (3.3V)
Supply Voltage (5.0V)
2.7
4.5
3.6
5.5
V
V
TAJ
[4]
Operating Temperature, Junction
–10
+100
°C
CTTL
Max. Capacitive Load on outputs for TTL levels
VDD = 4.5–5.5V, Output frequency = 1–40 MHz
VDD = 4.5–5.5V, Output frequency = 40–133 MHz
50
25
pF
pF
CCMOS
Max. Capacitive Load on outputs for CMOS levels
VDD = 4.5–5.5V, Output frequency = 1–66.6MHz
VDD = 4.5–5.5V, Output frequency = 66.6–133MHz
VDD = 3.0–3.6V, Output frequency = 1–40 MHz
VDD = 3.0–3.6V, Output frequency = 40–100 MHz
VDD = 2.7–3.0V, Output frequency = 1–66 MHz
50
25
30
15
15
pF
pF
pF
pF
pF
XREF
Reference Frequency, input crystal. Fundamental tuned crystals only.
10
30
MHz
tPU
Power-up time for all VDDs to reach minimum specified voltage (power ramps
must be monotonic)
0.05
50
ms
Electrical Characteristics Over the Operating Range (Part was characterized in a 20-pin SOIC package with external
crystal, Electrical Characteristics may change with other package types.)
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
VIL
Low-level Input Voltage
VDD = 4.5V–5.5V
VDD = 2.7V–3.6V
0.8
0.2VDD
V
V
VIH
High-level Input Voltage
VDD = 4.5V–5.5V
VDD = 2.7V–3.6V
2.0
0.7VDD
V
V
VOL
Low-level Output Voltage
VDD = 4.5V–5.5V, IOL= 16 mA
VDD = 2.7V–3.6V, IOL= 8 mA
0.4
0.4
V
V
VOHCMOS
High-level Output Voltage,
CMOS levels
VDD = 4.5V–5.5V, IOH = –16 mA
VDD = 2.7V–3.6V, IOH = –8 mA
VDD – 0.4
VDD – 0.4
V
V
VOHTTL
High-level Output Voltage,
TTL levels
VDD = 4.5V–5.5V, IOH = –8 mA
2.4
V
IIL
Input Low Current
VIN = 0V
10
μA
IIH
Input High Current
VIN = VDD
5
μA
IDD
Power Supply Current,
Unloaded
VDD = 4.5V–5.5V, Output frequency <= 133MHz
VDD = 2.7V–3.6V, Output frequency <= 100 MHz
45
25
mA
mA
IDDS
[5]
Stand-by current
VDD = 2.7V–3.6V
10
50
μA
RUP
Input Pull-up Resistor
VDD = 4.5V–5.5V, VIN = 0V
VDD = 4.5V–5.5V, VIN = 0.7VDD
1.1
50
3.0
100
8.0
200
M
Ω
k
Ω
IOE_CLKOUT CLKOUT Pull-down current VDD = 5.0
20
μA
Notes
3. Stresses greater than listed may impair the life of the device.
4. This product is sold in die form so operating conditions are specified for the die, or junction temperature
5. If external reference is used, it is required to stop the reference (set reference to LOW) during power down
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