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CY14B256L-SP45XCT Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY14B256L-SP45XCT
Description  256-Kbit (32K x 8) nvSRAM
Download  17 Pages
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY14B256L-SP45XCT Datasheet(HTML) 7 Page - Cypress Semiconductor

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PRELIMINARY
CY14B256L
Document #: 001-06422 Rev. *E
Page 7 of 17
Maximum Ratings
Exceeding maximum ratings may impair the useful life of
device. For user guidelines, not tested.
Storage Temperature .................................–65
°C to +150°C
Ambient Temperature with
Power Applied.............................................–55
°C to +125°C
Supply Voltage on VCC Relative to GND.......... –0.5V to 4.1V
Voltage Applied to Outputs
in High-Z State .......................................–0.5V to VCC + 0.5V
Input Voltage .......................................... –0.5V to Vcc + 0.5V
Transient Voltage (< 20 ns) on
Any Pin to Ground Potential...................–2.0V to VCC + 2.0V
Package Power Dissipation
Capability (TA = 25°C) ................................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 seconds) .......................................... +260
°C
Output Short Circuit Current [4].................................... 15 mA
Static Discharge Voltage.......................................... > 2001V
(in accordance with MIL-STD-883, method 3015)
Latch Up Current ................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0
°C to +70°C
2.7V to 3.45V
Industrial
–40
°C to +85°C
2.7V to 3.45V
DC Electrical Characteristics
(over the operating range) VCC = 2.7V to 3.45V [5, 6]
Parameter
Description
Test Conditions
Min
Max
Unit
ICC1
Average VCC Current tRC = 25 ns
tRC = 35 ns
tRC = 45 ns
Dependent on output loading and cycle rate.
Values obtained without output loads.
IOUT = 0 mA
Commercial
65
55
50
mA
mA
mA
Industrial
55
(tRC = 45 ns)
mA
mA
mA
ICC2
Average VCC Current
during STORE
All inputs do not care, VCC = Max
Average current for duration tSTORE
3mA
ICC3
Average VCC Current
at tAVAV = 200 ns, 3V,
25°C typical
WE > (VCC – 0.2). All other inputs cycling.
Dependent on output loading and cycle rate.
Values obtained without output loads.
10
mA
ICC4
Average VCAP Current
during AutoStore Cycle
All inputs do not care, VCC = Max
Average current for duration tSTORE
3mA
ISB
VCC Standby Current CE > (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V).
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
3mA
IIX
Input Leakage Current VCC = Max, VSS < VIN < VCC
– 1
+1
µA
IOZ
Off State Output
Leakage Current
VCC = Max, VSS < VIN < VCC, CE or OE > VIH
– 1
+1
µA
VIH
Input HIGH Voltage
2.0
VCC + 0.3
V
VIL
Input LOW Voltage
VSS – 0.5
0.8
V
VOH
Output HIGH Voltage IOUT = – 2 mA
2.4
V
VOL
Output LOW Voltage IOUT = 4 mA
0.4
V
VCAP
Storage Capacitor
Between VCAP pin and Vss, 5V rated
17
120
µF
Notes
4. Outputs shorted for no more than one second. No more than one output shorted at a time.
5. Typical conditions for the active current shown on the front page of the data sheet are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.
6. The HSB pin has IOUT = –10 µA for VOH of 2.4 V, this parameter is characterized but not tested.
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