CY14B104L-ZS45XIT datasheet(7/21 Pages) CYPRESS

Part #	CY14B104L-ZS45XIT

Description	4-Mbit (512K x 8/256K x 16) nvSRAM

Download	21 Pages

Scroll/Zoom	100%

Manufacturer	CYPRESS [Cypress Semiconductor]

Direct Link	http://www.cypress.com

Logo

7 / 21 page

CY14B104L/CY14B104N

PRELIMINARY

Document #: 001-07102 Rev. *E

Page 7 of 21

Data Protection

The CY14B104L/CY14B104N protects data from corruption

during low-voltage conditions by inhibiting all externally

initiated STORE and write operations. The low voltage

condition

is

detected

when

VCC < VSWITCH. If the

CY14B104L/CY14B104N is in a write mode (both CE and WE

low) at power up, after a RECALL, or after a STORE, the write

will be inhibited until a negative transition on CE or WE is

detected. This protects against inadvertent writes during

power up or brown out conditions.

Noise Considerations

Refer CY Application Note AN1064.

[+] Feedback

Similar Part No. - CY14B104L-ZS45XIT

Manufacturer	Part #	Datasheet	Description
Cypress Semiconductor	CY14B104L	664Kb / 22P	4-Mbit (512K x 8/256K x 16) nvSRAM
	CY14B104L	797Kb / 25P	4 Mbit (512K x 8/256K x 16) nvSRAM
	CY14E104L	649Kb / 22P	4 Mbit (512K x 8/256K x 16) nvSRAM
	CY14B104LA	863Kb / 23P	4 Mbit (512K x 8/256K x 16) nvSRAM
	CY14B104KA	1,000Kb / 31P	4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
	CY14B104K	905Kb / 33P	4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock
	CY14E104K	732Kb / 28P	4 Mbit (512K x 8 / 256K x 16) nvSRAM with Real-Time-Clock
	CY14B108L	860Kb / 24P	8 Mbit (1024K x 8/512K x 16) nvSRAM
	CY14E108L	611Kb / 20P	8 Mbit (1024K x 8/512K x 16) nvSRAM
	CY14E102L	634Kb / 21P	2-Mbit (256K x 8/128K x 16) nvSRAM