Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

CY7C1422BV18-250BZC Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1422BV18-250BZC
Description  36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
Download  28 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1422BV18-250BZC Datasheet(HTML) 6 Page - Cypress Semiconductor

Back Button CY7C1422BV18-250BZC Datasheet HTML 2Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 3Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 4Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 5Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 6Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 7Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 8Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 9Page - Cypress Semiconductor CY7C1422BV18-250BZC Datasheet HTML 10Page - Cypress Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 6 / 28 page
background image
PRELIMINARY
CY7C1422BV18
CY7C1429BV18
CY7C1423BV18
CY7C1424BV18
Document Number: 001-07035 Rev. *B
Page 6 of 28
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
Input-
Synchronous
Data Input signals, sampled on the rising edge of K and K clocks during valid Write
operations.
CY7C1422BV18
− D
[7:0]
CY7C1429BV18
− D
[8:0]
CY7C1423BV18
− D
[17:0]
CY7C1424BV18
− D
[35:0]
LD
Input-
Synchronous
Synchronous Load: This input is brought LOW when a bus cycle sequence is to be defined.
This definition includes address and Read/Write direction. All transactions operate on a burst of
2 data (one period of bus activity).
NWS[1:0]
Input-
Synchronous
Nibble Write Select 0, 1
− active LOW (CY7C1422BV18 only). Sampled on the rising edge of
the K and K clocks during Write operations. Used to select which nibble is written into the device
during the current portion of the Write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble
Write Select will cause the corresponding nibble of data to be ignored and not written into the
device.
BWS[3:0]
Input-
Synchronous
Byte Write Select 0, 1, 2, and 3
− active LOW. Sampled on the rising edge of the K and K
clocks during Write operations. Used to select which byte is written into the device during the
current portion of the Write operations. Bytes not written remain unaltered.
CY7C1429BV18
− BWS
0 controls D[8:0].
CY7C1423BV18
− BWS
0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1424BV18
− BWS
0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and
BWS3 controls D[35:27]
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write
Select will cause the corresponding byte of data to be ignored and not written into the device.
A
Input-
Synchronous
Address Inputs. Sampled on the rising edge of the K clock during active Read and Write
operations. These address inputs are multiplexed for both Read and Write operations. Internally,
the device is organized as 4M x 8 (2 arrays each of 2M x 8) for CY7C1422BV18, 4M x 9 (2 arrays
each of 2M x 9) for CY7C1429BV18, 2M x 18 (two arrays each of 1M x 18) for CY7C1423BV18
and 1M x 36 (2 arrays each of 512K x 36) for CY7C1424BV18. Therefore only 21 address inputs
are needed to access the entire memory array of CY7C1422BV18 and CY7C1429BV18, 20
address inputs for CY7C1423BV18, and 19 address inputs for CY7C1424BV18. These inputs
are ignored when the appropriate port is deselected.
Q[x:0]
Output-
Synchronous
Data Output signals. These pins drive out the requested data during a Read operation. Valid
data is driven out on the rising edge of both the C and C clocks during Read operations or K
and K when in single clock mode. When Read access is deselected, Q[x:0] are automatically
tri-stated.
CY7C1422BV18
− Q
[7:0]
CY7C1429BV18
− Q
[8:0]
CY7C1423BV18
− Q
[17:0]
CY7C1424BV18
− Q
[35:0]
R/W
Input-
Synchronous
Synchronous Read/Write Input: When LD is LOW, this input designates the access type (Read
when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the set-up
and hold times around edge of K.
C
Output-
Clock
Positive Output Clock Input. C is used in conjunction with C to clock out the Read data from
the device. C and C can be used together to deskew the flight times of various devices on the
board back to the controller. See application example for further details.
C
Output-
Clock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read
data from the device. C and C can be used together to deskew the flight times of various devices
on the board back to the controller. See application example for further details.
K
Input-
Clock
Positive Input Clock for Output Data. The rising edge of K is used to capture synchronous
inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses
are initiated on the rising edge of K.
K
Input-
Clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the
device and to drive out data through Q[x:0] when in single clock mode.
[+] Feedback
[+] Feedback


Similar Part No. - CY7C1422BV18-250BZC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1422BV18-250BZC CYPRESS-CY7C1422BV18-250BZC Datasheet
658Kb / 30P
   36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
More results

Similar Description - CY7C1422BV18-250BZC

ManufacturerPart #DatasheetDescription
logo
Cypress Semiconductor
CY7C1422JV18 CYPRESS-CY7C1422JV18 Datasheet
678Kb / 28P
   36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1422AV18 CYPRESS-CY7C1422AV18 Datasheet
466Kb / 28P
   36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1422BV18 CYPRESS-CY7C1422BV18_07 Datasheet
658Kb / 30P
   36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1422KV18 CYPRESS-CY7C1422KV18 Datasheet
944Kb / 32P
   36-Mbit DDR II SIO SRAM 2-Word Burst Architecture
CY7C1522AV18 CYPRESS-CY7C1522AV18_07 Datasheet
686Kb / 30P
   72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1522V18 CYPRESS-CY7C1522V18 Datasheet
446Kb / 28P
   72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1392JV18 CYPRESS-CY7C1392JV18 Datasheet
1Mb / 26P
   18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1392BV18 CYPRESS-CY7C1392BV18 Datasheet
483Kb / 27P
   18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1522AV18 CYPRESS-CY7C1522AV18 Datasheet
1Mb / 28P
   72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1392CV18 CYPRESS-CY7C1392CV18 Datasheet
695Kb / 30P
   18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com