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PRELIMINARY
CY7C1410BV18
CY7C1425BV18
CY7C1412BV18
CY7C1414BV18
Document #: 001-07036 Rev. *B
Page 9 of 26
Application Example[1]
Truth Table for DDR-II[2, 3, 4, 5, 6, 7]
Operation
K
RPS
WPS
DQ
DQ
Write Cycle:
Load address on the rising edge of K clock; input
write data on K and K rising edges.
L-H
X
L
D(A + 0) at K(t)
↑
D(A + 1) at K(t)
↑
Read Cycle:
Load address on the rising edge of K clock; wait one
and a half cycle; read data on C and C rising edges.
L-H
L
X
Q(A + 0) at C(t + 1)
↑ Q(A + 1) at C(t + 2) ↑
NOP: No Operation
L-H
H
H
D = X
Q = High-Z
D = X
Q = High-Z
Standby: Clock Stopped
Stopped
X
X
Previous State
Previous State
Notes:
1. The above application shows four QDR-II being used.
2. X = “Don't Care,” H = Logic HIGH, L= Logic LOW,
↑represents rising edge.
3. Device will power-up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 00, A + 01 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1 and t + 2 are the first and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
charging symmetrically.
Vt = Vddq/2
CC#
D
A
K
CC#
D
A
K
BUS
MASTER
(CPU
or
ASIC)
SRAM #1
SRAM #4
DATA IN
DATA OUT
Address
RPS#
WPS#
BWS#
Source K
Source K#
Delayed K
Delayed K#
R = 50
οηµσ
R = 250
οηµσ
R = 250
οηµσ
R
P
S
#
W
P
S
#
B
W
S
#
R
P
S
#
W
P
S
#
B
W
S
#
Vt
Vt
Vt
R
R
R
ZQ
CQ/CQ#
Q
K#
ZQ
CQ/CQ#
Q
K#
CLKIN/CLKIN#
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