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PD739C13 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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PD739C13 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 2 page MITSUBISHI PHOTO DIODES PD739C13 InGaAs PIN PHOTO DIODES PD739C13 DESCRIPTION Feature PD739C13 is a φ20µm InGaAs pin photodiodes with Trans-Impedance Amplifier (TIA). This PD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical communication systems. APPLICATION Receiver for optical communication system ABSOLUTE MAXIMUM RATINGS Note 1) Symbol Parameter Conditions Ratings Unit Vpd PD supply voltage - 20 V Vcc TIA supply voltage - 6 V Pin Photo input power - 2.0 mW Ipd PD reverse current - 2.0 mA Tstg Storage temperature - -40 ~ +85 C Note 1: The maximum rating and limitation over which the device should not be operated instant time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance section. RECOMMENDED OPERATING CONDITIONS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit Vcc TIA supply voltage - 3.0 3.3 5.5 V Tc Case temperature - -20 - +85 C ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, Vpd=3.3V , λ=1300nm) Limits Symbol Parameter Test conditions Min Typ Max Unit R Responsivity RL=50 Ω, Single-ended 0.75 1.2 - kV/W Icc TIA consumption current Pin=0 µW - 35 70 mA fc Cut-off frequency RL=50 Ω, -3dB, Pin=10µW 1.5 2.0 - GHz in Averaged equivalent input noise current density Pin=0 µW, f=10MHz-1.4GHz, RL=50 Ω - 9.0 - pA/ Hz 1/2 Pr Minimum received sensitivity NRZ, PBS=2 23-1, BER=10 -10, 2.488G/s, - -23 - dBm MITSUBISHI ELECTRIC ( 1 / 2 ) As of July ‘02 Build-in TIA Single 3.3V supply voltage for TIA Differential output Ball lens cap |
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