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PD739C13 Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part # PD739C13
Description  InGaAs PIN PHOTO DIODES
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PD739C13 Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI PHOTO DIODES
PD739C13
InGaAs PIN PHOTO DIODES
PD739C13
DESCRIPTION
Feature
PD739C13 is a
φ20µm InGaAs pin photodiodes
with Trans-Impedance Amplifier (TIA).
This PD with TIA features a high-speed response and
low noise, and is suitable for 2.5Gb/s optical
communication systems.
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Note 1)
Symbol
Parameter
Conditions
Ratings
Unit
Vpd
PD supply voltage
-
20
V
Vcc
TIA supply voltage
-
6
V
Pin
Photo input power
-
2.0
mW
Ipd
PD reverse current
-
2.0
mA
Tstg
Storage temperature
-
-40 ~ +85
C
Note 1: The maximum rating and limitation over which the device should not be operated instant
time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer
to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS
Limits
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vcc
TIA supply voltage
-
3.0
3.3
5.5
V
Tc
Case temperature
-
-20
-
+85
C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, Vpd=3.3V ,
λ=1300nm)
Limits
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
R
Responsivity
RL=50
Ω, Single-ended
0.75
1.2
-
kV/W
Icc
TIA consumption current
Pin=0
µW
-
35
70
mA
fc
Cut-off frequency
RL=50
Ω, -3dB, Pin=10µW
1.5
2.0
-
GHz
in
Averaged equivalent input
noise current density
Pin=0
µW,
f=10MHz-1.4GHz,
RL=50
-
9.0
-
pA/ Hz
1/2
Pr
Minimum
received
sensitivity
NRZ,
PBS=2
23-1,
BER=10
-10,
2.488G/s,
-
-23
-
dBm
MITSUBISHI ELECTRIC
( 1 / 2 )
As of July ‘02
Build-in TIA
Single 3.3V supply voltage for TIA
Differential output
Ball lens cap


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