6.42

11

IDT71P79204 (2Mx8-Bit), 71P79104 (2Mx9-Bit), 71P79804 (1Mx18-Bit) 71P79604 (512Kx36-Bit)

18 Mb DDR II SIO SRAM Burst of 2

Commercial and Industrial Temperature Ranges

DC Electrical Characteristics Over the Operating Temperature and

Parameter

Symbol

Test Conditions

Min

Max

Unit

Note

Input Leakage Current

-2

+2

uA

Output Leakage Current

Output Disabled

-2

+2

uA

Com'l

Ind

Operating Current

(x36): DDR

-

1050

1100

mA

1

200MHz

-

950

1000

167MHz

-

850

900

Operating Current

(x18): DDR

267MHz

-

950

980

mA

1

-

850

900

200MHz

-

750

800

167MHz

-

650

700

Operating Current

(x9,x8): DDR

-

800

850

mA

1

200MHz

-

700

750

167MHz

-

600

650

Standby Current: NOP

Device Deselected (in NOP state)

f=Max,

All Inputs <0.2V or > VDD -0.2V

267MHz

-

420

450

mA

2

-

375

410

200MHz

-

335

370

167MHz

-

300

335

Output High Voltage

RQ = 250

V

3,7

Output Low Voltage

RQ = 250

V

4,7

Output High Voltage

V5

Output Low Voltage

0.2

V

6

6432 tbl 10c

NOTES:

1. Operating Current is calculated with 50% read cycles and 50% write cycles.

2. Standby Current is only after all pending read and write burst operations are completed.

3. Outputs are impedance-controlled. IOH = -(VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

4. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175

Ω < RQ < 350Ω. This

parameter is tested at RQ = 250

Ω, which gives a nominal 50Ω output impedance.

5. This measurement is taken to ensure that the output has the capability of pulling to the VDDQ rail, and is not intended to be used as an

impedance measurement point.

6. This measurement is taken to ensure that the output has the capability of pulling to Vss, and is not intended to be used as an impedance

measurement point.

7. Programmable Impedance Mode.