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IDT71P79204 Datasheet(PDF) 11 Page - Integrated Device Technology |
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IDT71P79204 Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 23 page 6.42 11 IDT71P79204 (2Mx8-Bit), 71P79104 (2Mx9-Bit), 71P79804 (1Mx18-Bit) 71P79604 (512Kx36-Bit) 18 Mb DDR II SIO SRAM Burst of 2 Commercial and Industrial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 1.8 ± 100mV, VDDQ = 1.4V to 1.9V) Parameter Symbol Test Conditions Min Max Unit Note Input Leakage Current IIL VDD = Max VIN = VSS to VDDQ -2 +2 uA Output Leakage Current IOL Output Disabled -2 +2 uA Com'l Ind Operating Current (x36): DDR IDD VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 250MHZ - 1050 1100 mA 1 200MHz - 950 1000 167MHz - 850 900 Operating Current (x18): DDR IDD VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 267MHz - 950 980 mA 1 250MHZ - 850 900 200MHz - 750 800 167MHz - 650 700 Operating Current (x9,x8): DDR IDD VDD = Max, IOUT = 0mA (outputs open), Cycle Time > tKHKH Min 250MHZ - 800 850 mA 1 200MHz - 700 750 167MHz - 600 650 Standby Current: NOP ISB1 Device Deselected (in NOP state) IOUT = 0mA (outputs open), f=Max, All Inputs <0.2V or > VDD -0.2V 267MHz - 420 450 mA 2 250MHZ - 375 410 200MHz - 335 370 167MHz - 300 335 Output High Voltage VOH1 RQ = 250 Ω, IOH = -15mA VDDQ/2-0.12 VDDQ/2+0.12 V 3,7 Output Low Voltage VOL1 RQ = 250 Ω, IOL = 15mA VDDQ/2-0.12 VDDQ/2+0.12 V 4,7 Output High Voltage VOH2 IOH = -0.1mA VDDQ-0.2 VDDQ V5 Output Low Voltage VOL2 IOL = 0.1mA VSS 0.2 V 6 6432 tbl 10c NOTES: 1. Operating Current is calculated with 50% read cycles and 50% write cycles. 2. Standby Current is only after all pending read and write burst operations are completed. 3. Outputs are impedance-controlled. IOH = -(VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175 Ω < RQ < 350Ω. This parameter is tested at RQ = 250 Ω, which gives a nominal 50Ω output impedance. 4. Outputs are impedance-controlled. IOL = (VDDQ/2)/(RQ/5) and is guaranteed by device characterization for 175 Ω < RQ < 350Ω. This parameter is tested at RQ = 250 Ω, which gives a nominal 50Ω output impedance. 5. This measurement is taken to ensure that the output has the capability of pulling to the VDDQ rail, and is not intended to be used as an impedance measurement point. 6. This measurement is taken to ensure that the output has the capability of pulling to Vss, and is not intended to be used as an impedance measurement point. 7. Programmable Impedance Mode. |
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