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BCD40 Datasheet(PDF) 1 Page - Electronic devices inc. |
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BCD40 Datasheet(HTML) 1 Page - Electronic devices inc. |
1 / 2 page BCD RTD Max. Reverse Recovery Time , Trr (Fig.4) 200 nanosec Max. DC Reverse Current @ PRV and 25 oC, IR 100 Amps Storage Temperature Range, TSTG A 2 Ambient Operating Temperature Range,TA Max. DC Reverse Current @ PRV and 100 oC, IR 10 Amps 3 A -55 to +125 oC oC -55 to +150 oC oC RTD SERIES FAST RECOVERY ELECTRICAL CHARACTERISTICS (at TA=25 C Unless Otherwise Specified) FRM Max.One-Half Cycle Surge Current, IFM (Surge )@ 60Hz Forward Current Repetitive Peak,I FRM Max. DC Reverse Current @ PRV and 25 oC, IR 100 Max.One-Half Cycle Surge Current, I FM Amps Storage Temperature Range, TSTG A 2 Ambient Operating Temperature Range,TA ELECTRICAL CHARACTERISTICS (at TA=25 C Unless Otherwise Specified) Max. DC Reverse Current @ PRV and 100 oC, IR 10 Amps 3 A -55 to +125 oC oC -55 to +150 oC oC BCD SERIES STANDARD RECOVERY (Surge )@ 60Hz 100mA SILICON CARTRIDGE RECTIFIERS Peak Reve rse V olta ge PRV (V olts ) Leng th L Fig. 3 Drop at 25 o C And 100 mA VF (Vol ts) STANDARD RECOVERY BC D08 8, 000 13 1. 00 BC D10 10,0 00 13 1. 00 BC D12 12,0 00 13 1. 00 BC D15 15,0 00 20 1. 63 BC D20 20,0 00 26 2. 13 BC D25 33 2. 63 BC D30 30,0 00 40 3. 13 BC D35 35,0 00 46 3. 63 BC D40 40,0 00 53 4. 13 BC D45 45,0 00 60 4. 63 BC D50 50,0 00 66 5. 13 BC D60 60,0 00 73 6. 13 200 N AN OSE CO ND R EC OVE RY (F IG .4 ) RTD08 8, 000 20 1. 00 RTD10 10,0 00 20 1. 00 RTD12 12,0 00 20 1. 00 RTD15 15,0 00 30 1. 63 RTD20 20,0 00 40 2. 13 RTD25 25,0 00 50 2. 63 RTD30 30,0 00 60 3. 13 RTD35 35,0 00 70 3. 63 RTD40 40,0 00 80 4. 13 RTD45 45,0 00 90 4. 63 RTD50 50,0 00 100 5. 13 RTD60 60,0 00 110 6.13 SMALL SIZE MOLDED PACKAGE PRV 8,000 TO 60,000 VOLTS FAST RECOVERY (RTD SERIES) LOW LEAKAGE 25,000 Forward Current Repetitive Peak,I EDI Type Number Max. Forward Voltage EDI reserves the right to change these specifications at any time without notice. |
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