P4C198/198L, P4C198A/198AL

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Document # SRAM113 REV A

DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

V

Unit

2.0V

3.0V

2.0V

3.0V

V

DR

V

2.0

V

I

CCDR

Data Retention Current

10

15

600

900

µA

t

CDR

Chip Deselect to

CE

≥V

0

ns

Data Retention Time

V

t

R

†

Operation Recovery Time

t

RC

§

ns

*V

198: CE = V

198A: CE

V

DATA RETENTION WAVEFORM

I

CC

Symbol

Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

Industrial

Military

–10

N/A

–12

–15

–20

–25

–35

–45

Unit

N/A

mA

mA

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

N/A

150

155

160

170

180

N/A

170

160

155

150

145

180

170

160

155

150

N/A

N/A