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P4C198L-10CMB Datasheet(PDF) 2 Page - Pyramid Semiconductor Corporation |
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P4C198L-10CMB Datasheet(HTML) 2 Page - Pyramid Semiconductor Corporation |
2 / 13 page P4C198/198L, P4C198A/198AL Page 2 of 13 Document # SRAM113 REV A CE 1, CE2 ≥ VIH Mil. V CC = Max., Ind./Com’l. f = 0, Outputs Open V IN ≤ VLC or VIN ≥ VHC MAXIMUM RATINGS(1) Symbol Parameter Value Unit V CC Power Supply Pin with –0.5 to +7 V Respect to GND Terminal Voltage with –0.5 to V TERM Respect to GND V CC +0.5 V (up to 7.0V) T A Operating Temperature –55 to +125 °C Symbol Parameter Value Unit T BIAS Temperature Under –55 to +125 °C Bias T STG Storage Temperature –65 to +150 °C P T Power Dissipation 1.0 W I OUT DC Output Current 50 mA Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM ratingconditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE I SB Standby Power Supply Current (TTL Input Levels) CE 1, CE2 ≥ VIH Mil. V CC = Max ., Ind./Com’l. f = Max., Outputs Open ___ ___ 40 35 ___ ___ ___ ___ 20 15 40 n/a 1.5 n/a mA mA ___ ___ Standby Power Supply Current (CMOS Input Levels) I SB1 Commercial Grade(2) Ambient Temperature GND V CC 0°C to +70°C –40°C to +85°C 0V 0V 5.0V ± 10% 5.0V ± 10% 0V 5.0V ± 10% –55°C to +125°C Military Symbol C IN C OUT Parameter Input Capacitance Output Capacitance Conditions V IN = 0V V OUT = 0V 5 7 Unit pF pF CAPACITANCES(4) V CC = 5.0V, TA = 25°C, f = 1.0MHz n/a = Not Applicable Symbol DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) V IH V IL V HC V LC V CD V OL V OH I LI I LO Parameter Input High Voltage Input Low Voltage CMOS Input High Voltage CMOS Input Low Voltage Input Clamp Diode Voltage Output Low Voltage (TTL Load) Output High Voltage (TTL Load) Input Leakage Current Output Leakage Current Test Conditions V CC = Min., IIN = –18 mA I OL = +10 mA, VCC = Min. I OL = +8 mA, VCC = Min. I OH = –4 mA, VCC = Min. V CC = Max. Mil. V IN = GND to VCC Ind./Com’l. V CC = Max., CE = VIH, Mil. V OUT = GND to VCC Ind./Com’l. P4C198 / 198A Min 2.2 –0.5(3) V CC –0.2 –0.5(3) 2.4 –10 –5 –10 –5 Max V CC +0.5 0.8 V CC +0.5 0.2 –1.2 0.4 +10 +5 +10 +5 P4C198L / 198AL Min Max 2.2 –0.5(3) V CC –0.2 –0.5(3) 2.4 –5 n/a –5 n/a V CC +0.5 0.8 V CC +0.5 0.2 0.4 –1.2 +5 n/a +5 n/a Unit V V V V V V V V µA µA Typ. Industrial 0.5 0.5 |
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