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MIG75Q6CSB1X Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # MIG75Q6CSB1X
Description  High Power Switching Applications Motor Control Applications
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MIG75Q6CSB1X Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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MIG75Q6CSB1X
2004-10-01
4/10
Maximum Ratings (Tj = 25°C)
Stage
Characteristic
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
VCC
900
V
Collector-emitter voltage
⎯
VCES
1200
V
Collector current
Tc
= 25°C, DC
IC
75
A
Forward current
Tc
= 25°C, DC
IF
75
A
Collector power dissipation
Tc
= 25°C
PC
830
W
Inverter
Junction temperature
⎯
Tj
150
°C
Control supply voltage
VD-GND terminal
VD
20
V
Input voltage
IN-GND terminal
VIN
20
V
Fault output voltage
FO-GND terminal
VFO
20
V
Control
Fault output current
FO sink current
IFO
14
mA
Operating temperature
⎯
Tc
−20 to 100
°C
Storage temperature range
⎯
Tstg
−40 to 125
°C
Isolation voltage
AC 1 minute
VISO
2500
V
Screw torque (terminal)
M4
⎯
2
N·m
Module
Screw torque (mounting)
M5
⎯
3
N·m
Electrical Characteristics
1.
Inverter Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Tj = 25°C
⎯
⎯
1
Collector cut-off current
ICEX
VCE = 1200 V
Tj = 125°C
⎯
⎯
10
mA
Tj = 25°C
⎯
2.2
2.6
Collector-emitter saturation voltage
VCE (sat)
VD = 15 V,
IC = 75 A,
VIN = 15 V → 0 V
Tj = 125°C
⎯
⎯
3.0
V
Forward voltage
VF
IF = 75 A, Tj = 25°C
⎯
2.4
2.8
V
ton
⎯
2.0
3.0
tc (on)
⎯
0.3
⎯
trr
⎯
0.3
⎯
toff
⎯
1.5
2.5
Switching time
tc (off)
VCC = 600 V, IC = 75 A,
VD = 15 V, VIN = 15 V ↔ 0 V,
Tj = 25°C, Inductive load
(Note 1)
⎯
0.4
⎯
µs
Note 1: Switching time test circuit and timing chart.


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