2SC5990 datasheet(2/4 Pages) SANYO

Part #	2SC5990

Description	NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

2SC5990

No.8118-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Output Capacitance

Cob

VCB=10V, f=1MHz

15

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=50mA

65

100

mV

IC=2A, IB=100mA

110

165

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=2A, IB=100mA

0.88

1.3

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

100

V

Collector-to-Base Breakdown Voltage

V(BR)CES

IC=100µA, RBE=0Ω

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

-6

V

Turn-ON Time

ton

See specified Test Circuit.

35

ns

Storage Time

tstg

See specified Test Circuit.

300

ns

Fall Time

tf

See specified Test Circuit.

20

ns

Package Dimensions

Switching Time Test Circuit

unit : mm

7007-004

1.5

0.5

0.4

3.0

4.5

1.6

0.4

12

3

1.5

Top View

Bottom View

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

IT08356

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VCE=2V

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

0

0.5

1.0

1.5

2.0

3.0

4.0

2.5

3.5

IT09552

0.1

0.2

0.5

0.6

0.3

0.4

0.7

0.8

0.9

1.0

IB=0mA

5mA

10mA

15mA

20mA

30mA

40mA

50mA

80mA

60mA

VR10

RL=25Ω

VCC=25V

VBE= --5V

10IB1= --10IB2= IC=1A

+

50

Ω

INPUT

OUTPUT

RB

100

µF

470

µF

PW=20

µs

IB1

IB2

D.C.

≤1%

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