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CY7C1312BV18-250BZXI Datasheet(PDF) 10 Page - Cypress Semiconductor

Part # CY7C1312BV18-250BZXI
Description  18-Mbit QDR??II SRAM 2 Word Burst Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1312BV18-250BZXI Datasheet(HTML) 10 Page - Cypress Semiconductor

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CY7C1310BV18
CY7C1910BV18
CY7C1312BV18
CY7C1314BV18
Document #: 38-05619 Rev. *E
Page 10 of 28
Truth Table
The truth table for the CY7C1310BV18, CY7C1910BV18, CY7C1312BV18, and CY7C1314BV18 follows.[1, 2, 3, 4, 5, 6]
Operation
K
RPS WPS
DQ
DQ
Write Cycle:
Load address on the rising edge of K clock; input write data
on K and K rising edges.
L-H
X
L
D(A + 0) at K(t)
D(A + 1) at K(t)
Read Cycle:
Load address on the rising edge of K clock; wait one and a
half cycle; read data on C and C rising edges.
L-H
L
X
Q(A + 0) at C(t + 1)
↑ Q(A + 1) at C(t + 2) ↑
NOP: No Operation
L-H
H
H
D = X
Q = High Z
D = X
Q = High Z
Standby: Clock Stopped
Stopped
X
X
Previous State
Previous State
Write Cycle Descriptions
The write cycle description table for CY7C1314BV18 and CY7C1910BV18 follows. [1, 7]
BWS0/
NWS0
BWS1/
NWS1
KK
Comments
L
L
L-H
During the data portion of a write sequence
:
CY7C1310BV18
− both nibbles (D[7:0]) are written into the device,
CY7C1312BV18
− both bytes (D[17:0]) are written into the device.
L
L
L-H During the data portion of a write sequence
:
CY7C1310BV18
− both nibbles (D[7:0]) are written into the device,
CY7C1312BV18
− both bytes (D[17:0]) are written into the device.
L
H
L-H
During the data portion of a write sequence
:
CY7C1310BV18
− only the lower nibble (D[3:0]) is written into the device. D[7:4] remains unaltered,
CY7C1312BV18
− only the lower byte (D[8:0]) is written into the device. D[17:9] remains unaltered.
L
H
L-H During the data portion of a write sequence
:
CY7C1310BV18
− only the lower nibble (D[3:0]) is written into the device. D[7:4] remains unaltered,
CY7C1312BV18
− only the lower byte (D[8:0]) is written into the device. D[17:9] remains unaltered.
H
L
L-H
During the data portion of a write sequence
:
CY7C1310BV18
− only the upper nibble (D[7:4]) is written into the device. D[3:0] remains unaltered,
CY7C1312BV18
− only the upper byte (D[17:9]) is written into the device. D[8:0] remains unaltered.
H
L
L-H During the data portion of a write sequence
:
CY7C1310BV18
− only the upper nibble (D[7:4]) is written into the device. D[3:0] remains unaltered,
CY7C1312BV18
− only the upper byte (D[17:9]) is written into the device. D[8:0] remains unaltered.
H
H
L-H
No data is written into the devices during this portion of a write operation.
H
H
L-H No data is written into the devices during this portion of a write operation.
Notes
1. X = “Don't Care,” H = Logic HIGH, L= Logic LOW,
represents rising edge.
2. Device powers up deselected and the outputs in a tri-state condition.
3. “A” represents address location latched by the devices when transaction was initiated. A + 0 and A + 1 represent the internal address sequence in the burst.
4. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles respectively succeeding the “t” clock cycle.
5. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
6. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
7. Assumes a write cycle was initiated per the Write Port Cycle Description Truth Table. NWS0, NWS1, BWS0, BWS1, BWS2 and BWS3 can be altered on different portions
of a write cycle, as long as the setup and hold requirements are achieved.


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