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P4C1258-35PC Datasheet(PDF) 4 Page - Pyramid Semiconductor Corporation

Part # P4C1258-35PC
Description  ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM
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Manufacturer  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1258-35PC Datasheet(HTML) 4 Page - Pyramid Semiconductor Corporation

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P4C1258
Page 4 of 9
Document # SRAM123 REV OR
AC CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Notes:
5. CE is LOW and WE is HIGH for READ cycle.
6. WE is HIGH, and address must be valid prior to or coincident with CE
transition LOW.
7. Transition is measured ±200mV from steady state voltage prior to
change with specified loading in Figure 1. This parameter is sampled
and not 100% tested.
8. Read Cycle Time is measured from the last valid address to the first
transitioning address.
TIMING WAVEFORM OF READ CYCLE NO. 2(6)
TIMING WAVEFORM OF READ CYCLE NO. 1(5)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Chip Enable to Power Up Time
Chip Disable to Power Down Time
-15
Min
15
2
2
0
Max
15
15
8
15
-20
Min
20
2
3
0
Max
20
20
9
20
-25
Min
25
2
3
0
Max
25
25
10
25
-35
Min
35
2
3
0
Max
35
35
11
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns


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