P4C1256L70DILF datasheet(6/11 Pages) PYRAMID

Part #	P4C1256L70DILF

Description	LOW POWER 32K x 8 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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6 / 11 page

P4C1256L

Page 6 of 11

Document # SRAM121 REV E

3ns

Write

Active

Read

* including scope and test fixture.

Note:

Because of the high speed of the P4C1256L, care must be taken

when testing this device; an inadequate setup can cause a normal

functioning part to be rejected as faulty. Long high-inductance leads

that cause supply bounce must be avoided by bringing the V

CC and

ground planes directly up to the contactor fingers. A 0.01 µF high

frequency capacitor is also required between V

CC

and ground.

To avoid signal reflections, proper termination must be used; for

example, a 50

Ω test environment should be terminated into a 50Ω

load with 1.77V (Thevenin Voltage) at the comparator input, and a

589

Ω resistor must be used in series with D

OUT to match 639Ω

(Thevenin Resistance).

AC TEST CONDITIONS

TRUTH TABLE

Input Pulse Levels

Input Rise and Fall Times

Input Timing Reference Level

Output Timing Reference Level

Output Load

GND to 3.0V

1.5V

See Figures 1 and 2

Mode

Standby

D

OUT Disabled

Standby

Power

I/O

WE

OE

CE

High Z

D

OUT

High Z

X

H

L

X

H

L

X

H

L

Standby

Active

High Z

X

Figure 1. Output Load

Figure 2. Thievenin Equivalent

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (

CE

CE CONTROLLED)(10)

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P4C1256L70DILF Datasheet(PDF) 6 Page - Pyramid Semiconductor Corporation

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