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P4C1026-25L32C Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C1026-25L32C Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
3 / 10 page P4C1026 Page 3 of10 Document # SRAM127 REV E *V CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL DATA RETENTION CHARACTERISTICS Symbol V DR I CCDR t CDR t R † Parameter V CC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Test Conditions CE ≥ V CC –0.2V, V IN ≥ VCC –0.2V or V IN ≤ 0.2V Min 2.0 0 t RC § Typ.* V CC = 2.0V 3.0V 10 15 Max V CC = 2.0V 3.0V 250 500 Unit V µA ns ns DATA RETENTION WAVEFORM *T A = +125°C § t RC = Read Cycle Time † This parameter is guaranteed but not tested. I CC Symbol Parameter Temperature Range Dynamic Operating Current* Commercial Industrial –15 –20 –25 –35 Unit mA mA POWER DISSIPATION CHARACTERISTICS VS. SPEED 80 80 80 90 80 75 75 75 |
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