P4C1258-35JC datasheet(2/9 Pages) PYRAMID

Part #	P4C1258-35JC

Description	ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

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P4C1258

Page 2 of 9

Document # SRAM123 REV OR

MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

–0.5 to +7

V

Respect to GND

Terminal Voltage with

–0.5 to

V

TERM

Respect to GND

V

CC +0.5

V

(up to 7.0V)

T

A

Operating Temperature

–55 to +125

°C

Symbol

Parameter

Value

Unit

T

BIAS

Temperature Under

–55 to +125

°C

Bias

T

STG

Storage Temperature

–65 to +150

°C

P

T

Power Dissipation

1.0

W

I

OUT

DC Output Current

50

mA

RECOMMENDED OPERATING

TEMPERATURE AND SUPPLY VOLTAGE

Industrial

Commercial

Grade(2)

Ambient

Temperature

GND

V

CC

–40°C to +85°C

0°C to +70°C

0V

5.0V ± 10%

Symbol

C

IN

C

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

V

IN = 0V

V

OUT = 0V

5

7

Unit

pF

CAPACITANCES(4)

V

CC = 5.0V, TA = 25°C, f = 1.0MHz

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V

IL and IIL not more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

Typ.

I

SB

Standby Power Supply

Current (TTL Input Levels)

CE

≥ V

IH

V

CC = Max ., f = Max., Outputs Open

___

35

10

mA

___

CE

≥ V

HC

V

CC = Max., f = 0, Outputs Open

V

IN ≤ VLC or VIN ≥ VHC

Standby Power Supply

Current

(CMOS Input Levels)

I

SB1

Symbol

V

IH

V

IL

V

HC

V

LC

V

CD

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage

Input Low Voltage

CMOS Input High Voltage

CMOS Input Low Voltage

Input Clamp Diode Voltage

Output Low Voltage

(TTL Load)

Output High Voltage

(TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

V

CC = Min., IIN = 18 mA

I

OL = +8 mA, VCC = Min.

I

OH = –4 mA, VCC = Min.

V

CC = Max.

V

IN = GND to VCC

V

CC = Max., CE = VIH

V

OUT = GND to VCC

P4C1258

Min

2.2

–0.5(3)

V

CC –0.2

–0.5(3)

2.4

–5

Max

V

CC +0.5

0.8

V

CC +0.5

0.2

–1.2

0.4

+5

Unit

V

µA

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