| Manufacturer | Part # | Datasheet | Description |
Renesas Technology Corp |
RMQSAA3636DGBA
|
832Kb / 30P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
|
|
RMQSAA3636DGBA
|
363Kb / 30P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.5 Cycle Read latency)
May 25, 2015 |
Cypress Semiconductor |
CY7C1561V18
|
676Kb / 28P |
72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
|
CY7C1561V18
|
1Mb / 28P |
72-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
|
CY7C1561KV18
|
856Kb / 29P |
72-Mbit QDR II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Renesas Technology Corp |
RMQSGA3636DGBA
|
853Kb / 30P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
|
Cypress Semiconductor |
CY7C1241V18
|
1Mb / 28P |
36-Mbit QDR??II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
|
CY7C1161V18
|
1Mb / 29P |
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Renesas Technology Corp |
RMQSDA3636DGBA
|
898Kb / 31P |
36-Mbit QDR??II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
|
|
RMQSGA3636DGBA
|
359Kb / 30P |
36-Mbit QDR™ II SRAM 4-word Burst Architecture (2.0 Cycle Read latency)
May 25, 2015 |
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