Part Name
         Description
P4C1049

 HIGH SPEED 512K x 8 STATIC CMOS RAM ( 12 Page)


PYRAMID
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P4C1049
Page 2 of 12
Document # SRAM128 REV OR
P4C1049
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
V
CC
Power Supply Pin with
–0.5 to +7
V
Respect to GND
Terminal Voltage with
–0.5 to
V
TERM
Respect to GND
V
CC +0.5
V
(up to 7.0V)
T
A
OperatingTemperature
–55 to +125
°C
Symbol
Parameter
Value
Unit
T
BIAS
TemperatureUnder
–55 to +125
°C
Bias
T
STG
StorageTemperature
–65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
I
SB
Standby Power Supply
Current (TTL Input Levels)
CE
≥ V
IH
Mil.
V
CC= Max,
Ind./Com’l.
f = Max., Outputs Open
___
___
45
40
15
10
___
___
CE
≥ V
HC
Mil.
V
CC= Max,
Ind./Com’l.
f = 0, Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
Standby Power Supply
Current
(CMOS Input Levels)
I
SB1
Industrial
Grade(2)
Ambient
Temperature
GND
V
CC
0V
0V
5.0V ± 10%
5.0V ± 10%
0V
5.0V ± 10%
–55°C to +125°C
Military
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN = 0V
V
OUT = 0V
8
8
Unit
pF
pF
CAPACITANCES(4)
V
CC = 5.0V, TA = 25°C, f = 1.0MHz
Symbol
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
V
IH
V
IL
V
HC
V
LC
I
LI
I
LO
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Leakage Current
Test Conditions
V
CC = Max.
Mil.
V
IN = GND to VCC
Ind./Com’l.
V
CC = Max.,
Mil.
CE = V
IH,
Ind./Com’l.
V
OUT = GND to VCC
Min
2.2
–0.3(3)
V
CC –0.2
–0.3(3)
–10
–5
–10
–5
Max
V
CC +0.3
0.8
V
CC +0.3
0.2
+10
+5
+10
+5
Typ.
Commercial
–40°C to +85°C
0°C to +70°C
Unit
V
V
V
V
µA
µA
mA
mA
V
OL
Output Low Voltage
(TTL Load)
I
OL = +8 mA, VCC = Min.
0.4
V
Output High Voltage
(TTL Load)
V
OH
I
OH = –4 mA, VCC = Min.
2.4
V
Output Leakage Current
P4C1049L
___
___
40
n/a
10
n/a
___
___
Min
2.2
–0.3(3)
V
CC –0.2
–0.3(3)
–5
n/a
–5
n/a
Max
V
CC +0.3
0.8
V
CC +0.3
0.2
+5
n/a
+5
n/a
0.4
2.4
N/A = Not Applicable



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