P4C422-35DC datasheet(2/10 Pages) PYRAMID

Part #	P4C422-35DC

Description	HIGH SPEED 256 x 4 STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

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P4C422

Page 2 of 10

Document # SRAM101 REV. A

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

P4C422

Min

Max

V

OH

Output High Voltage

I

OH = –5.2 mA, VCC = Min.2.4

V

OL

Output Low Voltage

I

OL = +8 mA, VCC = Min.

0.4

V

IH

Input High Voltage

2.1

V

IL

Input Low Voltage

0.8

V

CL

Input Clamp Diode Voltage

I

IN = –10 mA

–1.5

V

I

IX

Input Load Current

GND≤ V

IN ≤ VCC

–10

10

µA

I

OZ

Output Current (High Z)

V

OL ≤ VOUT ≤ VOH ,

Output Disabled

–10

10

µA

I

OS

Output Short Circuit

V

CC= Max., VOUT = GND

90

mA

Current(3)

Grade(2)

Ambient Temp

Gnd

Vcc

Commercial

0°C to 70°C

0V

5.0V ±10%

Military

–55°C to 125°C

0V

5.0V ±10%

Symbol

Parameter

Test Conditions

Unit

Symbol

Parameter

Conditions Typ. Unit

C

IN

Input Capacitance

V

IN = 0V

5

pF

C

OUT

Output Capacitance V

OUT = 0V

7

pF

CAPACITANCES(4)

(V

CC = 5.0V, TA = 25°C, f = 1.0MHz)

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Value

Unit

T

BIAS

Temperature Under

– 55 to +125

°C

Bias

T

STG

Storage Temperature

– 65 to +150

°C

I

OUT

DC Output Current

20

mA

MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

– 0.5 to +7

V

Respect to GND

Terminal Voltage with

– 0.5 to

V

TERM

Respect to GND

V

CC + 0.5

V

(up to 7.0V)

T

A

Operating Temperature

– 55 to +125

°C

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. For test purposes, not more than one output at a time should be

shorted. Short circuit test duration should not exceed 30 seconds.

4. This parameter is sampled and not 100% tested.

5. Transition time is

≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input

and output levels of 1.5V. The output loading is equivalent to the

specified I

OL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15,

20, 25, 35) as in Fig. 1a and 1b respectively.

6. Transition time is

≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for

20, 25, and 35 ns products, see Fig 1d. Transition is measured at

steady state HIGH level -500mV or steady state LOW level +500mV

on the output from a level on the input with load shown in Fig. 1c.

7. t

W is measured at tWSA = min.; tWSA is measured at tW = min.

POWER DISSIPATION CHARACTERISTICS VS. SPEED

Symbol

I

CC

Parameter

Dynamic Operating Current

Temperature

Range

Commercial

Military

-10

90

N/A

-12

90

N/A

-15

90

-20

90

-25

65

90

-35

65

90

Unit

mA

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