CY7C1049DV33
Document #: 38-05475 Rev. *C
Page 8 of 8
Document History Page
Document Title: CY7C1049DV33 4-Mbit (512K x 8) Static RAM
Document Number: 38-05475
REV.
ECN NO.
Issue Date
Orig. of
Change
Description of Change
**
201560
See ECN
SWI
Advance Data sheet for C9 IPP
*A
233729
See ECN
SYT
1.AC, DC parameters are modified as per EROS(Spec # 01-2165)
2.Pb-free offering in the ‘ordering information’
*B
351096
See ECN
PCI
Changed from Advance to Preliminary
Removed 20 ns Speed bin
Corrected DC voltage (min) value in maximum ratings section from - 0.5 to
- 0.3V
Redefined ICC values for Com’l and Ind’l temperature ranges
ICC (Com’l): Changed from 100, 80 and 67 mA to 90, 80 and 75 mA for 8, 10
and 12ns speed bins respectively
ICC (Ind’l): Changed from 80 and 67 mA to 90 and 85 mA for 10 and 12ns
speed bins respectively
Added VIH(max) spec in Note# 2
Changed reference voltage level for measurement of Hi-Z parameters from
±500 mV to ±200 mV
Added Data Retention Characteristics/Waveform and footnotes 11 and 12
Changed Package Diagram name from 44-pin TSOP II Z44 to 44-pin TSOP
II ZS44
Changed part names from Z to ZS in the Ordering Information Table
Added 8 ns parts in the Ordering Information Table
Added Lead-Free Ordering Information
Shaded Ordering Information Table
*C
446328
See ECN
NXR
Converted from Preliminary to Final
Removed -8 speed bin
Removed Commercial Operating Range product information
Added Automotive Operating Range product information
Updated Thermal Resistance table
Updated footnote #8 on High-Z parameter measurement
Replaced Package Name column with Package Diagram in the Ordering
Information table
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