CY7C1041D
Document #: 38-05472 Rev. *C
Page 3 of 9
Thermal Resistance[4]
Parameter
Description
Test Conditions
SOJ Package TSOP II Package Unit
ΘJA
Thermal Resistance
(Junction to Ambient)[4]
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
57.91
50.66
°C/W
ΘJC
Thermal Resistance
(Junction to Case)[4]
36.73
17.17
°C/W
AC Test Loads and Waveforms[5]
Switching Characteristics[6] Over the Operating Range
-10 (Industrial)
-12 (Automotive)
Parameter
Description
Min.
Max.
Min.
Max.
Unit
Read Cycle
tpower
VCC(typical) to the First Access[7]
100
100
µs
tRC
Read Cycle Time
10
12
ns
tAA
Address to Data Valid
10
12
ns
tOHA
Data Hold from Address Change
3
3
ns
tACE
CE LOW to Data Valid
10
12
ns
tDOE
OE LOW to Data Valid
5
6ns
tLZOE
OE LOW to Low Z
0
0
ns
tHZOE
OE HIGH to High Z[8, 9]
5
6ns
tLZCE
CE LOW to Low Z[9]
3
3
ns
tHZCE
CE HIGH to High Z[8, 9]
5
6ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
10
12
ns
tDBE
Byte Enable to Data Valid
5
6ns
tLZBE
Byte Enable to Low Z
0
0
ns
tHZBE
Byte Disable to High Z
5
6ns
Notes:
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c)
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
IOL/IOH and 30-pF load capacitance.
7. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
8. tHZOE, tHZCE, tHZBE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of AC Test Loads. Transition is measured when the outputs enter a high impedance state.
9. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZBE is less than tLZBE,and tHZWE is less than tLZWE for any given device.
90%
10%
3.0V
GND
90%
10%
ALL INPUT PULSES
5V
OUTPUT
5 pF
INCLUDING
JIG AND
SCOPE
(c)
≤ 3 ns
≤ 3 ns
OUTPUT
R1 481
Ω
R2
255
Ω
167
Ω
Equivalent to:
VENIN EQUIVALENT
1.73V
THÉ
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
30 pF*
OUTPUT
Z = 50
Ω
50
Ω
1.5V
(a)
High-Z Characteristics:
(b)
10 ns device
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