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PRELIMINARY
CY7C1034DV33
Document #: 001-08351 Rev. *A
Page 5 of 8
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min.
Typ.
Max.
Unit
VDR
VCC for Data Retention
2
V
ICCDR
Data Retention Current
VCC = 2V , CE1 > VCC – 0.2V,
CE2 < 0.2V, VIN > VCC – 0.2V or
VIN < 0.2V
25
mA
tCDR
[3]
Chip Deselect to Data Retention Time
0
ns
tR
[12]
Operation Recovery Time
tRC
ns
Data Retention Waveform
3V
3V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
Switching Waveforms
Read Cycle No. 1[13, 14]
Read Cycle No. 2 (OE Controlled)[7, 14, 15]
Notes:
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs
13. Device is continuously selected. OE, CE = VIL.
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE
ICC
ISB
IMPEDANCE
ADDRESS
DATA OUT
VCC
SUPPLY
CURRENT
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