Part Name
         Description
CY7C1021D

 1-Mbit (64K x 16) Static RAM ( 11 Page)


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CY7C1021D
Document #: 38-05462 Rev. *E
Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND [4] ... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [4] .....................................–0.5V to VCC+0.5V
DC Input Voltage [4]..................................–0.5V to VCC+0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Speed
Industrial
–40°C to +85°C
5V
± 10%
10 ns
Automotive
–40°C to +125°C
12 ns
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
–10 (Industrial)
–12 (Automotive)
Unit
Min
Max
Min
Max
VOH
Output HIGH Voltage
IOH = –4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
IOL = 8.0 mA
0.4
0.4
V
VIH
Input HIGH Voltage
2.2
VCC + 0.5V
2.0
VCC + 0.5V
V
VIL
Input LOW Voltage [4]
−0.5
0.8
–0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
−1+1
–5
+5
µA
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
−1+1
–5
+5
µA
ICC
VCC Operating
Supply Current
VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
100 MHz
80
-mA
83 MHz
72
120
mA
66 MHz
58
100
mA
40 MHz
37
63
mA
ISB1
Automatic CE Power-down
Current —TTL Inputs
Max VCC, CE > VIH
VIN > VIH or VIN < VIL, f = fmax
10
50
mA
ISB2
Automatic CE Power-down
Current —CMOS Inputs
Max VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
3
15
mA
Note
4. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.



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