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P4C147-20LM Datasheet(PDF) 3 Page - Pyramid Semiconductor Corporation |
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P4C147-20LM Datasheet(HTML) 3 Page - Pyramid Semiconductor Corporation |
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3 / 10 page  P4C147 Page 3 of 10 Document # SRAM103 REV A Min Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. Transient inputs with V IL and IIL not more negative than –3.0V and –100mA, respectively, are permissible for pulse widths up to 20 ns. 4. This parameter is sampled and not 100% tested. 5. CE is LOW and WE is HIGH for READ cycle. 6. WE is HIGH, and address must be valid prior to or coincident with CE transition LOW. 7. Transition is measured ±200mV from steady state voltage prior to change with specified loading in Figure 1. This parameter is sampled and not 100% tested. 8. Read Cycle Time is measured from the last valid address to the first transitioning address. TIMING WAVEFORM OF READ CYCLE NO. 2 (6) TIMING WAVEFORM OF READ CYCLE NO. 1(5) Sym. t RC t AA t AC t HZ t PU t PD Read Cycle Time Chip Enable Access Time Output Hold from Address Change Chip Enable to Output in Low Z Chip Disable to Output in High Z Chip Enable to Power Up Time Chip Disable to Power Down Time -10 -12 -15 -20 -25 -35 Unit ns ns ns ns ns ns ns ns Min Max 10 10 4 10 10 2 2 0 AC CHARACTERISTICS—READ CYCLE (V CC = 5V ± 10%, All Temperature Ranges) (2) 12 2 2 0 Max 12 12 5 12 Min 15 2 2 0 Max 15 15 6 15 Min 20 2 2 0 Max 20 20 8 20 Min 25 2 2 0 Max 25 25 10 25 Min 35 2 2 0 Max 35 35 14 35 Parameter Address Access Time t OH t LZ |
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