P4C163-25FMB datasheet(2/12 Pages) PYRAMID

Part #	P4C163-25FMB

Description	ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

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P4C163/163L

Page 2 of 12

Document # SRAM120 REV C

MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

–0.5 to +7

V

Respect to GND

Terminal Voltage with

–0.5 to

V

TERM

Respect to GND

V

CC +0.5

V

(up to 7.0V)

T

A

Operating Temperature

–55 to +125

°C

Symbol

Parameter

Value

Unit

T

BIAS

Temperature Under

–55 to +125

°C

Bias

T

STG

Storage Temperature

–65 to +150

°C

P

T

Power Dissipation

1.0

W

I

OUT

DC Output Current

50

mA

Ambient

Temperature

Commercial

0°C to +70°C

0V

5.0V ± 10%

Grade(2)

GND

V

CC

Grade(2)

GND

V

CC

Ambient

Temperature

Military

–55 to +125°C

0V

5.0V ± 10%

RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied. Exposure to MAXIMUM rating conditions for extended

periods may affect reliability.

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage(2)

P4C163

P4C163L

Min

Max

Min

Max

V

IH

Input High Voltage

2.2

V

CC+0.5

2.2

V

CC+0.5

V

IL

Input Low Voltage

–0.5(3)

0.8

–0.5(3)

0.8

V

HC

CMOS Input High Voltage

V

CC–0.2

V

CC+0.5

V

CC–0.2

V

CC+0.5

V

LC

CMOS Input Low Voltage

–0.5(3)

0.2

–0.5(3)

0.2

V

CD

Input Clamp Diode Voltage

V

CC = Min., IIN = –18 mA

–1.2

V

OL

Output Low Voltage

I

OL = +8 mA, VCC = Min.

0.4

V

(TTL Load)

V

OLC

Output Low Voltage

I

OLC = +100 µA, VCC = Min.

0.2

V

(CMOS Load)

V

OH

Output High Voltage

I

OH = –4 mA, VCC = Min.

2.4

V

(TTL Load)

V

OHC

Output High Voltage

I

OHC = –100 µA, VCC = Min.

V

CC–0.2

V

CC–0.2

V

(CMOS Load)

I

LI

Input Leakage Current

V

CC = Max.

Mil.

–10

+10

–5

+5

µA

V

IN = GND to VCC

Com’l.

–5

+5

N/A

I

LO

Output Leakage Current

V

CC = Max., CE = VIH,

Mil.

–10

+10

–5

+5

µA

V

OUT= GND to VCC

Com’l.

–5

+5

N/A

Symbol

Parameter

Test Conditions

Unit

Symbol

Parameter

Conditions Typ. Unit

C

IN

Input Capacitance

V

IN = 0V

5

pF

CAPACITANCES(4)

(V

CC = 5.0V, TA = 25°C, f = 1.0MHz)

Symbol

Parameter

Conditions Typ. Unit

C

OUT

Output Capacitance

V

OUT = 0V

7

pF

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V

IL and IIL not more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

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