CY7C199D
Document #: 38-05471 Rev. *D
Page 3 of 10
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied............................................. –55
°C to +125°C
Supply Voltage on VCC to Relative GND [2] ... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [2] ...................................–0.5V to VCC + 0.5V
DC Input Voltage [2] ............................... –0.5V to VCC + 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Speed
Industrial
–40°C to +85°C
5V
± 0.5V
10 ns
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
7C199D-10
Unit
Min
Max
VOH
Output HIGH Voltage
IOH=–4.0 mA
2.4
V
VOL
Output LOW Voltage
IOL=8.0 mA
0.4
V
VIH
Input HIGH Voltage [2]
2.0
VCC + 0.5
V
VIL
Input LOW Voltage [2]
–0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
µA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
–1
+1
µA
ICC
VCC Operating Supply Current
VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
100 MHz
80
mA
83 MHz
72
mA
66 MHz
58
mA
40 MHz
37
mA
ISB1
Automatic CE
Power-down Current— TTL Inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fmax
10
mA
ISB2
Automatic CE
Power-down Current— CMOS Inputs
Max VCC, CE > VCC – 0.3V
VIN > VCC – 0.3V or VIN < 0.3V, f = 0
3mA
Note:
2. VIL(min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
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