P3C125620JC datasheet(7/10 Pages) PYRAMID

Part #	P3C125620JC

Description	HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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7 / 10 page

P3C1256

Page 7 of 10

Document # SRAM122 REV B

DATA RETENTION CHARACTERISTICS

Symbol

V

DR

I

CCDR

t

CDR

t

R

†

Parameter

V

CC for Data Retention

Data Retention Current

Chip Deselect to

Data Retention Time

Operation Recovery Time

Test Conditons

CE

≥ V

CC –0.2V,

V

IN ≥ VCC –0.2V

or V

IN ≤ 0.2V

Min

2.0

0

t

RC

§

Typ.*

V

CC =

2.0V

3.0V

Max

V

CC =

2.0V

3.0V

Unit

10

15

600

900

V

µA

ns

*T

A = +25°C

§t

RC = Read Cycle Time

†

This parameter is guaranteed but not tested.

DATA RETENTION WAVEFORM

TSOP PIN CONFIGURATION

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