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CY7C109D
CY7C1009D
Document #: 38-05468 Rev. *E
Page 6 of 11
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min
Max
Unit
VDR
VCC for Data Retention
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0
V
ICCDR
Data Retention Current
3mA
tCDR [4]
Chip Deselect to Data Retention Time
0
ns
tR [13]
Operation Recovery Time
tRC
ns
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [14, 15]
Read Cycle No. 2 (OE Controlled) [15, 16]
4.5V
4.5V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
OE
CE1
ADDRESS
CE2
DATA OUT
VCC
SUPPLY
CURRENT
HIGH
ICC
ISB
IMPEDANCE
Notes
13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
14. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
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