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IDT70P3337S233RM Datasheet(PDF) 4 Page - Integrated Device Technology

Part # IDT70P3337S233RM
Description  1024K/512K x18 SYNCHRONOUS DUAL QDR-II
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT70P3337S233RM Datasheet(HTML) 4 Page - Integrated Device Technology

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18/9Mb QDR-IITM x18 IDT70P3307/70P3337
SYNCHRONOUS Dual QDR-IITM
Preliminary Datasheet
Commercial Temperatue Range
4
July 16, 2007
output of the data, generating very tight tolerances between the two.
The user may disable the DLL by holding DOFF low. With the DLL off,
the C and C (or K and K, if C and C are not used) will directly clock
the output register of the IDT70P3307/70P3337. With the DLL off,
there will be a propagation delay from the time the clock enters the
device until the data appears at the output. QDR-II becomes QDRITM
with DLL off. First data out is referenced to C instead of C.
Echo Clock
The echo clocks, CQ and CQ, are generated by the C and C
clocks (or K, K if C, C are disabled). The rising edge of C generates
the rising edge of CQ, and the falling edge of CQ. The rising edge of
C
generates the rising edge of CQ and the falling edge of CQ. This
scheme improves the correlation of the rising and falling edges of the
echo clock and will improve the duty cycle of the individual signals.
The echo clock is very closely aligned with the data, guaran-
teeing that the echo clock will remain closely correlated with the data,
within the tolerances designated.
Normal QDR-II Read and Write Operations
The IDT70P3307/70P3337 Dual QDR-II Static RAM sup-
ports QDR-II burst-of-two read/write operations. Read operations are
initiated by holding the read port select (R) low, and presenting the
read address to the address port during the rising edge of K which
will latch the address. Data is delivered after the next rising edge of
the next K (t + 1), using C and C as the output timing references; or
K and K, if C and C are tied high.
The write operation is a standard QDR-II burst-of-two write
operation, except the data is not available to be read until the next
clock cycle (this is one cycle later than standard QDR-II SRAM).
Normal QDR write cycles are initiated by holding the write port select
(W) low at K rising edge. Also, the Byte Write inputs (BW0-1),
designating which bytes are to be written, need to be held low for both
the K and K clocks. On the rising edge of K the first word of the data
must also be present on the data input bus D[17:0] observing the
designated set up times. Upon the rising edge of K the first word of
the burst will be latched into the input register. After K has risen, and
the designated hold times observed, the second half of the clock cycle
is initiated by presenting the write address to the address bus A[X:0],
the BW0-1 inputs for the second data word of the burst, and the second
data item of the burst to the data bus D[17:0]. Upon the rising edge
of K, the second word of the burst will be latched, along with the
designated address. Both the first and second words of the burst will
be written into memory as designated by the address and byte write
enables. The addresses for the write cycles is provided at the K rising
edge, and data is expected at the rising edge of K and K, beginning
at the same K that initiated the cycle.
Programmable Impedance
An external resistor, RQ, must be connected between the
ZQ pin on the IDT70P3307/70P3337 and tied to VSS to allow the
IDT70P3307/70P3337 to adjust its output drive impedance. The value
of RQ must be 5X the value of the intended drive impedance of the
IDT70P3307/70P3337. The allowable range of RQ to guarantee
impedance matching with a tolerance of +/- 15% is 175 ohms to 350
ohms. The output impedance is adjusted every 1024 clock cycles to
correct for drifts in supply voltage and temperature. If the user wishes
to drive the output impedance of the IDT70P3307/70P3337 to its
lowest value, the ZQ pin may be tied to VDDQ.


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