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ICS9DB801C Datasheet(PDF) 8 Page - Integrated Device Technology |
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ICS9DB801C Datasheet(HTML) 8 Page - Integrated Device Technology |
8 / 19 page IDTTM/ICSTM Eight Output Differential Buffer for PCI Express (50-200MHz) ICS9DB801C REV C 08/16/07 ICS9DB801C Eight Output Differential Buffer for PCI Express (50-200MHz) 8 Electrical Characteristics - DIF 0.7V Current Mode Differential Pair TA = 0 - 70°C; VDD = 3.3 V +/-5%; CL =2pF, RS=33.2Ω, RP=49.9Ω, ΙREF = 475Ω PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES Current Source Output Impedance Zo 1 VO = Vx 3000 Ω 1 Voltage High VHigh 660 850 1,3 Voltage Low VLow -150 150 1,3 Max Voltage Vovs 1150 1 Min VoltageVuds -300 1 Crossing Voltage (abs) Vcross(abs) 250 550 mV 1 Crossing Voltage (var) d-Vcross Variation of crossing over all edges 140 mV 1 Long Accuracy ppmsee Tperiod min-max values 0 ppm1,2 Rise Time tr VOL = 0.175V, VOH = 0.525V 175 700 ps 1 Fall Time tf VOH = 0.525V VOL = 0.175V 175 700 ps 1 Rise Time Variation d-tr 125 ps 1 Fall Time Variation d-tf 125 ps 1 Duty Cycle dt3 Measurement from differential wavefrom 45 55 % 1 Skew tsk3 VT = 50% 50 ps 1 PLL mode, Measurement from differential wavefrom 50 ps 1 BYPASS mode as additive jitter 50 ps 1 1Guaranteed by design and characterization, not 100% tested in production. 3I REF = VDD/(3xRR). For RR = 475Ω (1%), IREF = 2.32mA. IOH = 6 x IREF and VOH = 0.7V @ ZO=50Ω. Statistical measurement on single ended signal using oscilloscope math function. mV Measurement on single ended signal using absolute value. mV 2 All Long Term Accuracy and Clock Period specifications are guaranteed with the assumption that the input clock complies with CK409/CK410 accuracy requirements Jitter, Cycle to cycle tjcyc-cyc |
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