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MG150J7KS61 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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MG150J7KS61 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 4 page  MG150J7KS61 Maximum Ratings (Ta = 25°C) Stage Characteristics Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 150 Collector current 1 ms ICP 300 A DC IF 150 Forward current 1 ms IFM 300 A Inverter Collector power dissipation (Tc = 25°C) PC 750 W Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES ±20 V DC IC 75 Collector current 1 ms ICP 150 A Collector power dissipation (Tc = 25°C) PC 375 W Reverse voltage VR 600 V DC IF 75 Brake Forward current 1 ms IFM 150 A Junction temperature Tj 150 °C Storage temperature range Tstg −40~125 °C Isolation voltage Visol 2500 (AC 1 min) V Terminal ⎯ 2 (M4) Module Screw torque Mounting ⎯ 3 (M5) N･m Electrical Characteristics (Tj = 25°C) 1. Inverter stage Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ±20 V, VCE = 0 ⎯ ⎯ ±500 nA Collector cut-off current ICES VCE = 600 V, VGE = 0 ⎯ ⎯ 1.0 mA Gate-emitter cut-off voltage VGE (off) VCE = 5 V, IC = 150 mA 5.0 6.5 8.0 V Tj = 25°C ⎯ 1.8 2.3 Collector-emitter saturation voltage VCE (sat) VGE = 15 V, IC = 150 A Tj = 125°C ⎯ ⎯ 2.5 V Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 30000 ⎯ pF Turn-on delay time td (on) ⎯ ⎯ 1.00 Turn-off time toff ⎯ ⎯ 1.20 Switching time Fall time tf ⎯ ⎯ 0.50 Reverse recovery time trr VCC = 300 V, IC = 150 A VGE = ±15 V, RG = 15 Ω (Note 1) ⎯ ⎯ 0.30 µs Forward voltage VF IF = 150 A ⎯ 2.4 2.8 V Note 1: Switching time test circuit & timing chart 2005-04-01 3 |
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