M464S0824DT1-L1L datasheet(5/9 Pages) SAMSUNG

Part #	M464S0824DT1-L1L

Description	8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 9 page

M464S0824DT1

Rev. 0.0 Jun. 1999

PC100 SODIMM

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

°C)

Parameter

Symbol

Test Condition

Version

Unit

Note

-1H

-1L

Operating current

(One bank active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

500

mA

1

Precharge standby current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

8

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC =∞

8

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

120

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

48

Active standby current in

power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

24

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC =∞

24

Active standby current in

non power-down mode

(One bank active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

200

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC =∞

Input signals are stable

120

mA

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks activated

tCCD = 2CLKs

540

mA

1

Refresh current

ICC5

tRC

≥ tRC(min)

600

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

C

8

mA

L

3.2

mA

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ)

Notes :

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M464S0824DT1-L1L Datasheet(PDF) 5 Page - Samsung semiconductor

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