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M63824GP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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M63824GP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 4 page  Feb.2003 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63824GP/KP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE Clamping Diode Characteristics 400 300 200 100 0 0 0.5 1.0 1.5 2.0 500 Forward bias voltage VF (V) Ta=25 °C Ta=85 °C Ta=–40 °C 1 2 3 4 5 67 Duty Cycle-Collector Characteristics (M63824GP) 200 100 0 400 300 500 0 20 40 60 80 100 Duty cycle (%) 1 2 3 45 67 Duty Cycle-Collector Characteristics (M63824GP) 200 100 0 400 300 500 0 20 40 60 80 100 Duty cycle (%) 1 2 3 4 56 7 Duty Cycle-Collector Characteristics (M63824KP) 0 0 20 40 60 80 100 Duty cycle (%) 200 100 400 300 500 1 2 34 56 7 Duty Cycle-Collector Characteristics (M63824KP) 0 0 20 40 60 80 100 Duty cycle (%) 200 100 400 300 500 Thermal Derating Factor Characteristics 1.0 0.8 0.2 0 0 25 50 75 100 M63824KP M63824GP 85 0.416 0.312 0.4 0.6 Ambient temperature Ta ( °C) •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequencyy ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 25 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously-operated circuit. •Ta = 85 °C •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value the circle represents the value of the simultaneously -operated circuit. •Ta = 85 °C TYPICAL CHARACTERISTICS |
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Similar Description - M63824GP |
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