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M63816KP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part # M63816KP
Description  8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M63816KP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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Jan. 2000
PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63816P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
Grounded Emitter Transfer Characteristics
Input voltage VI (V)
Clamping Diode Characteristics
Forward bias voltage VF (V)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
0
0
0.4
0.8
1.2
1.6
2.0
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage VCE(sat) (V)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
100
101
102
101
102
103
23
5 7
2 3 5 7
2
3
5
7
2
3
5
7
103
23
5 7
II = 2mA
Ta = –40
°C
Ta = 25
°C
Ta = 85
°C
Ta = 25
°C
VCE 10V
0
0.4
0.8
1.2
1.6
2.0
VCE = 4V
Ta = 25
°C
Ta = 85
°C
Ta = –40
°C
01
2
3
4
5
VCE = 4V
Ta = 85
°C
Ta = 25
°C
Ta = –40
°C
Ta = 25
°C
Ta = 85
°C
Ta = –40
°C


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