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M63813KP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M63813KP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 5 page  Jan. 2000 PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63813P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics Input voltage VI (V) Grounded Emitter Transfer Characteristics Input voltage VI (V) Clamping Diode Characteristics Forward bias voltage VF (V) 50 40 30 20 10 0 250 200 150 100 50 0 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2.0 Ta = 25 °C Ta = 85 °C Ta = –40 °C 01 2 3 4 5 VCE = 4V Ta = 85 °C Ta = 25 °C Ta = –40 °C Ta = 85 °C Ta = 25 °C Ta = –40 °C VCE = 4V |
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