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M63812GP Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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M63812GP Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
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5 / 5 page  Jan. 2000 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63812P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE Grounded Emitter Transfer Characteristics Input voltage VI (V) Grounded Emitter Transfer Characteristics Input voltage VI (V) Clamping Diode Characteristics Forward bias voltage VF (V) 50 40 30 20 10 0 02 4 6 8 VCE = 4V 12 Ta = 85 °C Ta = 25 °C Ta = –40 °C 10 250 200 150 100 50 0 04 8 12 16 20 Ta = 85 °C Ta = 25 °C Ta = –40 °C VCE = 4V 250 200 150 100 50 0 0 0.4 0.8 1.2 1.6 2.0 Ta = –40 °C Ta = 85 °C Ta = 25 °C |
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