Aug. 1999

TIMING DIAGRAM

NOTE 1 TEST CIRCUIT

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>

M54580P/FP

7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY

50

4

0

—

—

—

V

µA

—

Symbol

Unit

Parameter

Test conditions

Limits

min

max

V

V

V

50

—

—

—

—

—

800

—

0.9

0.8

–0.3

–0.65

—

3000

—

1.5

1.2

–0.6

–0.95

100

—

0

0

—

—

–100

–50

mA

V

mA

+ : The typical values are those measured under ambient temperature (Ta) of 25

°C. There is no guarantee that these values are obtained under any

conditions.

ns

ns

—

—

200

7500

—

—

Symbol

Unit

Parameter

Test conditions

Limits

min

typ

max

Parameter

Limits

Symbol

Unit

min

typ

max

Duty Cycle

P : no more than 85%

FP : no more than 50%

Duty Cycle

P : no more than 100%

FP : no more than 100%

“H” input voltage

“L” input voltage

Supply voltage

Output current

(Current per 1 cir-

cuit when 7 circuits

are coming on si-

multaneously)

µA

°C

Collector-emitter breakdown voltage

Clamping diode reverse current

DC amplification factor

Collector-emitter saturation voltage

Input current

Turn-on time

Turn-off time

PG

50

Ω

INPUT

OUTPUT

(1) Pulse generator (PG) characteristics : PRR = 1kHz,

tw = 10

connections and input capacitance at probes

Measured device

ton

50%

50%

50%

50%

toff

INPUT

OUTPUT