1HN04CH datasheet(2/4 Pages) SANYO

Part #	1HN04CH

Description	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

1HN04CH

No. A0925-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Turn-ON Delay Time

td(on)

See specified Test Circuit.

13

ns

Rise Time

tr

See specified Test Circuit.

7.8

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

87

ns

Fall Time

tf

See specified Test Circuit.

60

ns

Total Gate Charge

Qg

VDS=50V, VGS=10V, ID=120mA

1.6

nC

Gate-to-Source Charge

Qgs

VDS=50V, VGS=10V, ID=120mA

0.25

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=50V, VGS=10V, ID=120mA

0.25

nC

Diode Forward Voltage

VSD

IS=120mA, VGS=0V

0.83

1.2

V

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)

7015A-004

1 : Gate

2 : Source

3 : Drain

SANYO : CPH3

2.9

0.05

0.4

0.15

2

1

3

0.95

PW=10µs

D.C.≤1%

P.G

50Ω

G

S

D

ID=60mA

RL=833Ω

Rg

VDD=50V

VOUT

1HN04CH

VIN

10V

0V

VIN

Rg=1.2kΩ

ID -- VDS

ID -- VGS

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

RDS(on) -- Ta

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

°C

250

50

150

100

200

0

40

20

80

60

100

120

0

1.0

0.8

0.6

0.1

0.2

0.4

0.9

0.7

0.3

0.5

IT12899

0

1.0

0.5

2.0

3.0

1.5

2.5

3.5

4.0

4.5

5.0

IT12900

IT12902

0

2468

16

10

12

14

IT12901

16

0

4

2

8

12

6

10

14

Ta=25

°C

VGS=2.5V

VDS=10V

--60

0

10

12

14

4

8

6

2

16

--40

--20

0

20

40

60

80

100

120

140

160

V GS

=4V

, I D

=3

0mA

V GS

=10V

, I D

=6

0mA

60mA

ID=30mA

4.0V

3.0V

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