CPH5856 datasheet(4/6 Pages) SANYO

Part #	CPH5856

Description	MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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4 / 6 page

CPH5856

No. A0687-4/6

00.5

1.0

1.5

2.0

3.0

2.5

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VDS=10V

ID=2.5A

IT12040

2

3

5

7

2

3

5

7

2

3

5

7

10

1.0

0.1

0.01

0.1

23

5 7 1.0

0.01

23

5 7

23

5 7 10

23

5

IT12041

IDP=10A

ID=2.5A

Operation in this

area is limited by RDS(on).

100ms

100

µs

1ms

10ms

≤10µs

0.1

1.0

23

5

7

10

7

23

5

7

5

3

2

5

3

2

10

100

7

5

3

2

1.0

VDD=10V

VGS=4V

td(on)

tf

t r

td(off)

IT12038

IT12036

0.01

0.1

10

1.0

23

5 7

23

5 7

23

5 7

10

1.0

7

5

3

2

0.1

7

5

3

2

VDS=10V

75

°C

25°

C

Ta=

--25

°C

IT12037

00.2

0.4

0.6

0.8

1.0

1.2

0.001

0.01

0.1

10

1.0

7

5

3

2

7

5

3

2

7

5

3

2

7

5

3

2

VGS=0V

02468

10

12

14161820

10

100

1000

7

5

3

2

7

5

3

2

f=1MHz

Ciss

Coss

Crss

IT12039

DC

operation

(T

a=25

°C)

IT12042

0

20

40

0.2

0.4

0.6

0.8

0.9

1.0

60

80

100

120

140

160

VGS -- Qg

[MOSFET]

PD -- Ta

A S O

Total Gate Charge, Qg -- nC

Ambient Temperature, Ta --

°C

Mounted

on

a

ceramic

board

(600mm

2✕

0.8mm)

1unit

Drain-to-Source Voltage, VDS -- V

Ta=25

°C

Single pulse

Mounted on a ceramic board (600mm2

✕0.8mm) 1unit

SW Time -- ID

Ciss, Coss, Crss -- VDS

yfs -- ID

IS -- VSD

[MOSFET]

Drain Current, ID -- A

Diode Forward Voltage, VSD -- V

Drain-to-Source Voltage, VDS -- V

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CPH5856 Datasheet(PDF) 4 Page - Sanyo Semicon Device

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