1999 Jun 17

7

Philips Semiconductors

Product specification

Low-voltage frequency synthesizer

for radio telephones

UMA1021M

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is

desirable to take normal precautions appropriate to handling MOS devices. This device meets class 2 ESD test

requirements [Human Body Model (HBM)], in accordance with

“MIL STD 883C - method 3015”.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

digital supply voltage

−0.3

+5.5

V

charge-pump supply voltage

−0.3

+5.5

V

−0.3

+5.5

V

voltage at pins 6, 8, 9 and 11 to 13

−0.3

V

voltage at pins 1, 2, 3, 15, 16, 19 and 20

−0.3

V

∆V

GND

−0.3

+0.3

V

total power dissipation

−

150

mW

storage temperature

−55

+125

°C

operating ambient temperature

−30

+85

°C

maximum junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient in free air

120

K/W