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2SA2203 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part No. 2SA2203
Description  PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
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Maker  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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 2 page
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2SA2203
No. A0542-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=--1A, IB=--50mA
--110
--220
mV
VCE(sat)2
IC=--1A, IB=--100mA
--90
--180
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=--1A, IB=--100mA
--0.85
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10µA, IE=0A
--60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=--100µA, RBE=0Ω
--60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--60
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10µA, IC=0A
--7
V
Turn-On Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
480
ns
Fall Time
tf
See specified Test Circuit.
28
ns
Package Dimensions
Package Dimensions
unit : mm (typ)
unit : mm (typ)
7518-003
7003-003
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
VR
VCC= --30V
VBE=5V
+
+
50
INPUT
OUTPUT
RL
220
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC= --10IB1=10IB2= --0.5A
1k
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA




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